TECHNOLOGY

Imaging Technology

“CMOS Image Sensor”
In order to develop the attractive device, you may always face a lot of complicated trade-offs, such as sensitivity, frame rate, dynamic range, pixel resolution, optical size, power consumption, etc., ...
At such times, you can contact us readily. Brookman Technology will help you to remove or minimize them as far as we can.

CMOS Global Shutter

Global shutter captures “the moment” as an image without any motion blurs. Conventional CMOS sensors remain so-called “reset noise” when the global shutter is activated. Then the image is sadly degraded by the shutter function. Brookman Technology and Shizuoka University have developed a Low-Noise global shutter pixel named “True Snapshot PIXEL (TS-PIXEL)”. Our charge domain TS-PIXEL can remove the reset noise, so as to get a clear image.

Column-parallel A/D Converter

Column paralleled ADC can be an inevitable block for the state of the art CMOS image sensors. In particular, Brookman Technology specialized in cyclic type A/D converter, which achieves high speed, high bit resolution, and low noise performance. This key technology is certainly implemented to our sensors.(*)
(*) We can provide you not only the cyclic type but also the other types of superior performance A/D converter.

Ultra Low Noise technique

High-speed multiple sampling technique can minimize the temporal noise as much as possible. It makes the sensor operate with ultra low noise and high sensitivity.

Technical Publications

Our base technologies have been presented in major international conferences and publications.

2020.07. Trans. NS: A Radiation-Hardened CMOS Image Sensor With Pixels Exhibiting a Negligibly Small Dark-Level Increase During Ionizing Radiation

2020.02. Sensors: An 8-Tap CMOS Lock-In Pixel Image Sensor for Short-Pulse Time-of-Flight Measurements

2019.04. Journal. SSC: A Time-Resolved NIR Lock-In Pixel CMOS Image Sensor With Background Cancelling Capability for Remote Heart Rate Detection

2018.02. ISSCC: A 2.1μm 33Mpixel CMOS Imager with Multi-Functional 3-Stage Pipeline ADC for 480fps High Speed Mode and 120fps Low-Noise Mode

2017.12. Trans. ED: A 1.1- μm 33-Mpixel 240-fps 3-D-Stacked CMOS Image Sensor With Three-Stage Cyclic-Cyclic-SAR Analog-to-Digital Converters

2017.02. ISSCC: A 0.44erms Read-Noise 32fps 0.5Mpixel High-Sensitivity RG-Less-Pixel CMOS Image Sensor Using Bootstrapping Reset

2016.02. ISSCC: A 1.1μm 33Mpixel 240fps 3D-Stacked CMOS Image Sensor with 3-Stage Cyclic-Based Analog-to-Digital Converters

2014.02. ISSCC: A 413×240-Pixel Sub-Centimeter Resolution Time-of-Flight CMOS Image Sensor with In-Pixel Background Canceling Using Lateral-Electric-Field Charge Modulators

2012.12. Trans. ED The 2013 Walter Kosonocky Award: A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters

2012.12. Trans. ED: A Low-Noise High-Dynamic-Range 17-b 1.3-Megapixel 30-fps CMOS Image Sensor With Column-Parallel Two-Stage Folding-Integration/Cyclic ADC

2012.02. ISSCC: A 33Mpixel 120fps CMOS Image Sensor Using 12b Column-Parallel Pipelined Cyclic ADCs

2012.01. Journal. SSC: A Low-Noise High Intrascene Dynamic Range CMOS Image Sensor With a 13 to 19b Variable-Resolution Column-Parallel Folding-Integration/Cyclic ADC

2011.06. IISW: A High Speed Low-Noise CIS with 12b 2-stage Pipeline Cyclic ADCs

2011.06. IISW: A 33Mpixel, 120fps CMOS Image Sensor for UDTV Application with Two-stage Column-Parallel Cyclic ADCs

2011.02. ISSCC: An 80μVrms-Temporal-Noise 82dB-Dynamic-Range CMOS Image Sensor with a 13-to-19b Variable-Resolution Column-Parallel Folding-Integration/Cyclic ADC

2010.07. Trans. ED Vol.57, No.7: Effects of Negative Bias Operation and Optical Stress on Dark Current in CMOS Image Sensors

2009.11. Trans. ED Vol.56, No.11: A High-Speed Low-Noise CMOS Image Sensor With 13-b Column-Parallel Single-Ended Cyclic ADCs

2009.02. ISSCC: A 0.1e- Vertical FPN 4.7e- Read Noise 71dB DR CMOS Image Sensor with 13b Column-Parallel Single-Ended Cyclic ADCs

2008.02. ISSCC: A CMOS Image Sensor Integrating Column-Parallel Cyclic ADCs with On-Chip Digital Error Correction Circuits

<NOTE>

ISSCC: International Solid-State Circuits Conference

IISW: International Image Sensor Workshop

Trans. ED: IEEE Transactions on Electron Devices

Journal. SSC: IEEE Journal of Solid-State Circuits

Trans. NS: IEEE Transactions on Nuclear Science

Technical Background

Figured below are achievements of the national project(*), which inspired to establish BrookmanTechnology Inc..
(*) See in detail at Hamamatsu Optronics Cluster Initiative

Wide Dynamic Range CMOS Image Sensor

・Linear Wide Dynamic Range Performance: 146dB
・On-chip 12bit Column-parallel A/D Converter

High Speed CMOS Image Sensor

・3500 fps with 512 × 512 resolution
・On-chip 12bit Column-parallel A/D Converter
・CMOS Global Shutter

Time of Flight (TOF) Ranging CMOS Image Sensor

・High pixel resolution: 320 × 240
・Custom pixel design for TOF range imaging